芯片等级和缺陷(Blemish)
对最上面一行像素的电荷包,读出时需要通过其所在列的所有像素。如果一列像素中的某个像素不能形成势阱,或形成的势阱有缺陷,则在其上面的行的像素电荷包就不能转移出去或转移不完全。这是一种缺陷。
像素感光失效,或量子效率变低,这也是一种缺陷。
缺陷的种类分为:
Traps 陷阱:Pixels where charge is temporarily held. Traps are counted if they have a capacity greater than 200 e− at 253 K.
点缺陷(Point defects):
Black Spot黑点:Are counted when they have a signal level of less than 80% of the local mean at a signal level of approximately half full-well.半满井条件下,计数值低于周围像素平均值的80%的像素。
White Spot白点:Are counted when they have a generation rate 125 times the specified maximum dark signal generation rate (measured between 253 and 293 K). 电子生成速率是指定的暗电流规格最大值的125倍的像素(测量温度范围253K~293K)。
列缺陷(Column defects):A column which contains at least 50 white or 50 black defects. 一列像素黑点或白点个数多于50个。
Column defects A column which contains at least 50 white or 50 black defects.
GRADE | 0 | 1 | 2 |
Column defects;black or white | 0 | 3 | 6 |
Black spots | 100 | 150 | 250 |
Traps >200 e− | 10 | 20 | 30 |
White spots | 100 | 150 | 200 |
Grade 5 Devices which are fully functional, with image quality below that of grade 2, and which may not meet all other performance parameters.
Note: The effect of temperature on defects is that traps will be observed less at higher temperatures but more may appear below 253 K. The amplitude of white spots and columns will decrease rapidly with temperature.
Greateyes以芯片生产商的芯片等级给出缺陷等级,通常为Grade 0或Grade 1。
上述内容由我司Jerry Huang 整理收集,仅用于知识的分享和共同学习,未经过同意不得擅自转载。